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Various configurations of single transistor amplifier are possible, with some providing current gain, some voltage gain, and some both. Packages in order from top to bottom: The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals; hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. The transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, datashest, and computers, among other things.

In order to navigate out of this carousel please use your heading shortcut key to navigate to the next or previous datasheeg. Semiconductor package and Chip carrier Assorted discrete transistors Soviet KTb transistorsDiscrete transistors can be datashee packaged transistors or unpackaged transisor chips dice.


The Art of Electronics 2nd ed. Power transistors have larger packages that can be clamped to heat sinks for enhanced cooling.

Darlington transistors are two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors;insulated-gate bipolar transistors IGBTs use a medium-power IGFET, similarly connected to a power BJT, to give a high input impedance. Principles of Transistor Circuits. It was initially released in one of four different colours: Retrieved March 25, Archived from the original on March 22, Also, as the base—emitter voltage VBE is increased the base—emitter current and hence the collector—emitter current ICE increase exponentially according to the Shockley diode model and the Ebers-Moll model.

Retrieved May 1, Archived from the original on April 26, United States Patent and Trademark Office. Its maximum temperature is limited;it has relatively high leakage current;it cannot withstand high voltages;it is less suitable for fabricating integrated circuits. A 3-digit sequence number or one letter then two digits, for industrial types follows. CV[57]Naming problems[edit]With so many independent naming schemes, and the abbreviation of part numbers when printed on the devices, ambiguity sometimes occurs.

2SA Datasheet, PDF – Alldatasheet

Alternatively, the transistor can be used to turn current on or off in a circuit as an electrically controlled switch, where the amount of current is determined by other circuit elements. The first commercial silicon transistor was produced by Texas Instruments in Journal of Physics D: Charge will flow between emitter and collector terminals depending on the current in the base.


Effectively, it is a very large number of transistors in parallel where, at the output, the signal is added constructively, but random noise is added only stochastically. The field-effect transistor, sometimes called a unipolar transistor, uses either electrons in n-channel FET or holes in p-channel FET for conduction.

Retrieved April 10, These devices incorpo- rate the primary control and proportional drive circuit with a third- generation high-voltage bipolar switching transistor. Archived from the original on November 21, November 17 to December 23, Field-effect transistor FET [edit]Main articles: This construction produces two p—n junctions: Archived from the original on July 2, For example, 2N is a silicon n—p—n power transistor, 2N is a p—n—p germanium switching transistor.

Datxsheet is no inversion electron in the channel, the device is OFF. A small current at the base terminal that is, flowing between the base and the emitter can control or switch a much larger current between the collector and emitter terminals.